The power of this type of Laser Pointer is high enough.
In view of the above two constraints, the last couple of years, major research institutions and high-power semiconductor suppliers and is no longer blind pursuit to improve the output power of the CM Bar, but gradually the focus of development shifted to a high power, high beam quality developed areas of the semiconductor laser of single components and the short-array devices. Development status of high-power semiconductor laser single components. Compared with CM Bar, the semiconductor laser of single components, the independent electricity, heat, work environment, to avoid the thermal crosstalk between the light-emitting unit, and in the life of the beam quality compared with CM Bar, has obvious advantages. In addition, the single components of the drive current is low, more than one series a significant reduction in drive power requirements. And then the content on the screen of the projection equipment will automatically turn the page after Laser Pointer is used.
At the same time, the heat of the single components is relatively low, can be used directly to conduction cooling of the heat sink to avoid the micro-channel heat sink into the short life. And a separate hot work environment can be high power density, the linear density of the active region optical power of the single components up to 200 mW at / μm in above, with a narrow spectral width, while the CM Bar active region optical power lines density of only 50 to 85 mW / μm in left and right. In particular, independent of heat, electric work environment significantly reduces the probability of failure of the device, the support of the high stability of gold-tin solder packaging technology, commercial high-power single-component life reached more than 100,000 hours, far higher than the CM Bar life, reduce the cost of the use of the device. And the emitter does not need to align with the receiver of Laser Pointer .
Based on the above advantages, the single components of great alternative to the CM Bar, a high power, the trend of the mainstream of high beam quality and semiconductor laser device. In this context, the single components in recent years, rapid development, especially in high power fiber laser pumping module needs to promote high-brightness semiconductor laser fiber coupling, and 105 μm/125 μm in multimode pigtail match, light-emitting unit stripe width 90 to 100 μm single components in the power and beam quality are improved significantly.
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